* 75V/60A,RDS(ON)=5.0mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
*.

* DC/DC Converter
* Load Switch
* SMPS Secondary Side Synchronous Rectifier PIN CONFIGURATION( TO-220-3L ) .

The SPN9507 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particular.

SPN9910

SPN9926

SPN9926A

SPN9926B

SPN9926W

SPN9928

SPN9971

SPN9977

SPN01N60C3

SPN01N60S5

SPN02N60C3

SPN02N60S5

SPN03N60C3